DSF05S30CTB
TOSHIBA Diode Silicon Epitaxial
Schottky Barrier Type
DSF05S30CTB
High Speed Switching Application
Unit: mm
0.
25±0.
02 0.
65±0.
02
Absolute Maximum Ratings (Ta = 25°C)
0.
7±0.
02
1.
2±0.
05
CATHODE MARK
Characteristic
Symbol
Rating
Unit
Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range
VR IO IFSM Tj Tstg
30 500＊
5 125 −55 to 125
V mA A °C °C
0.
05±0.
03
0.
8±0.
05
0.
05±0.
03
0.
38+-00.
.
0023
*: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad dimensions of 4 mm × 4 mm.
CST2B
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in...