SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE HIGH DARLINGTON
TRANSISTOR.
BC517
EPITAXIAL PLANAR
NPN TRANSISTOR
BC
JA
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC PC Tj Tstg
RATING 40 30 10 500 625 150
-55ᴕ150
UNIT V V V mA mW ᴱ ᴱ
L M
C
K
E G
D
H FF
1 23
N DIM MILLIMETERS A 4.
70 MAX B 4.
80 MAX C 3.
70 MAX D 0.
45 E 1.
00 F 1.
27 G 0.
85 H 0.
45 J 14.
00 +_0.
50 K 0.
55 MAX L 2.
30 M 0.
45 MAX N 1.
00
1.
COLLECTOR 2.
BASE 3.
EMITTER
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Br...