RCR1526SQ
P-Channel Enhancement Mode Field Effect
Transistor
z Features VDS(V) = -30V, ID = -5.
2A, RDS(ON) = 51mΩ @VGS = -10V.
RDS(ON) = 68mΩ @VGS = -4.
5V.
High density cell design for low RDS(ON).
very small outline surface mount package.
z Pin Configuration
DDD
D
z General Description This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.
This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss are needed in a
SSSG
z Package Information
⑧ ⑦ ⑥⑤
①② ③④
SOP8 Unit:mm...