STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features • 6 µs of short-circuit withstand time • VCE(sat) = 1.
55 V (typ.
) @ IC = 30 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and very fast recovery antiparallel diode Applications • Motor control • UPS • PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are ess...

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