μ PA2463T1Q
MOS FIELD EFFECT
TRANSISTOR
Preliminary Data Sheet
R07DS0188EJ0100 Rev.
1.
00
Dec 06, 2010
Description
The μ PA2463T1Q is a switching device, which can be driven directly by a 2.
5 V power source.
The μ PA2463T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
Features
• 2.
5 V drive available • Low on-state resistance
⎯ RDS(on)1 = 20.
0 mΩ MAX.
(VGS = 4.
5 V, ID = 3.
0 A) ⎯ RDS(on)2 = 21.
0 mΩ MAX.
(VGS = 4.
0 V, ID = 3.
0 A) ⎯ RDS(on)3 = 24.
0 mΩ MAX.
(VGS = 3.
1 V, ID = 3.
0 A) ⎯ RDS(on)4 = 28.
5 mΩ MAX.
(VGS = 2.
5 V, ID = 3.
0 A) • Built-in G-S protection diode against ESD
Ord...