NTMFS4C03N Power MOSFET 30 V, 2.
1 mW, 136 A, Single N−Channel, SO−8FL Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Notes 1, 3) Steady State TC = 25°C TC = 25°C Continuous Drain Cur- rent 3) RqJA (Notes 1, 2, Power Dissipation RqJA (Notes 1, 2, 3) Steady State TA = 25°C TA = 25°C Pulsed Drain Current TA = 25...

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