NTTFS4H07N MOSFET – Power, Single, N-Channel, m8-FL 25 V, 66 A Features • Optimized Design to Minimize Conduction and Switching Losses • Optimized Package to Minimize Parasitic Inductances • Optimized material for improved thermal performance • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Performance DC-DC Converters • System Voltage Rails • Netcom, Telecom • Servers & Point of Load MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (TA = 25°C, Note 1) VDSS 25 V VGS ±20 V ID 18.
5 A Power Dissipation RqJA (TA = 25°C, Note 1)...

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