2SK3472
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3472
Switching
Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 4.
0 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 0.
8 S (typ.
) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement-model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
...