N-Channel PowerTrench MOSFET
FDD050N03B N-Channel PowerTrench® MOSFET March 2013 FDD050N03B N-Channel PowerTrench® MOSFET 30 V, 90 A, 5.0 mΩ Features • RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A • Fast Switching Speed • Low Gate Charge, QG = 33 nC( Typ.) • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant ...
Fairchild Semiconductor