Part Number
|
IRLL024ZPbF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Aug 6, 2015 |
Detailed Description
|
Features l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repeti...
|
Datasheet
|
IRLL024ZPbF
|
Overview
Features l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
G
PD - 95990A
IRLL024ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 60mΩ S ID = 5.
0A
SOT-223
Absolute Maximum Ratings
P...
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