RJK03M8DNS Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0774EJ0110 Rev.
1.
10 May 29, 2012 Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 4.
3 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008JB-A (Package name: HWSON-8) 5 6 78 5 678 D DDD 4 321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance C...

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