NP20P06SLG
-60V – -20A – P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1518EJ0100 Rev.
1.
00
Jun.
17, 2022
Description
This product is P-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 48 m Max.
( VGS = -10 V, ID = -10 A ) RDS(on) = 64 m Max.
( VGS = -4.
5 V, ID = -10 A )
Low input capacitance : Ciss = 1650 pF Typ.
Built-in gate protection diode Designed for automotive application and AEC-Q101 qualified.
Pb-free (This product does not contain Pb in the external electrode)
Outline
4
Drain
1 2 3 1.
Gate 2.
Drain 3.
Source 4.
Drain(Fin)
MP-3ZK (TO-252)
Absolute Maximum Rating...