NP23N06YDG
MOS FIELD EFFECT
TRANSISTOR
Preliminary Data Sheet
R07DS0014EJ0100 Rev.
1.
00
Jul 01, 2010
Description
The NP23N06YDG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 27 mΩ MAX.
(VGS = 10 V, ID = 11.
5 A)
• Low Ciss: Ciss = 1200 pF TYP.
(VDS = 25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON
Ordering Information
Part No.
NP23N06YDG -E1-AY ∗1 NP23N06YDG -E2-AY ∗1
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode.
)
Package 8-pi...