RJK0451DPB 40V, 35A, 7.
0m max.
Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0073EJ0200 Rev.
2.
00 Apr 09, 2013 Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 5.
5 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application  Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipatio...

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