LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier
Transistor
z Features 1.
High transition frequency.
(Typ.
fT=3.
2GHz) 2.
Small rbb`Cc and high gain.
(Typ.
4ps) 3.
Small NF.
4.
We declare that the material of product compliance with RoHS requirements.
5.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
VCBO
20
Collector-Emitter Voltage
VCEO
11
Emitter-base voltage
VEBO
3
Collector Current
IC 50
Collector power dissipation
PC 0.
2
Junction temperature
Tj 150
Storage temperature
Tstg -55~+150
U...