LESHAN RADIO COMPANY, LTD.
Epitaxial planar type
NPN silicon
transistor
zFeatures 1) High DC current gain.
hFE = 1200 (Typ.
) 2) High emitter-base voltage.
VEBO =12V (Min.
) www.
DataSheet4U.
com3) Low VCE (sat).
VCE (sat) = 0.
18V (Typ.
) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available.
L2SD2114K*LT1
3 1
2 SOT– 23 (TO–236AB)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage Collector-emitter voltage Emitter-base voltage
VCBO VCEO VEBO
Collector current
IC
Collector power dissipation
Junction temperature Storage temperature
∗ Single pulse Pw=100ms
PC
Tj Tstg
Limits 25 20 12 0.
5 1
0.
2
150 −55∼+150
Unit V V V
A(DC)
A(Pulse) ∗
W
°C °C
COLLECTOR 3
1 B...