FDS86242 N-Channel PowerTrench® MOSFET August 2010 FDS86242 N-Channel PowerTrench® MOSFET 150 V, 4.
1 A, 67 mΩ Features General Description „ Max rDS(on) = 67 mΩ at VGS = 10 V, ID = 4.
1 A „ Max rDS(on) = 98 mΩ at VGS = 6 V, ID = 3.
3 A „ High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
„ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant Applications „ DC/DC converters and Off-Line UPS „ Distributed Power Architectures and VRMs „ Primary Sw...

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