RJK03N2DPA 30V, 40A, 4.
0mΩmax.
Built in SBD N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline Preliminary Datasheet R07DS0783EJ0200 Rev.
2.
00 Feb 12, 2013 RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 5 678 D DDD 4321 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Chann...

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