Part Number
|
IRF7704PbF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Aug 17, 2015 |
Detailed Description
|
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile ( 1.1mm) l Available in Tape & Ree...
|
Datasheet
|
IRF7704PbF
|
Overview
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile ( 1.
1mm) l Available in Tape & Reel l Lead-Free
VDSS
-40V
PD- 96025A
IRF7704PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
46@VGS = -10V
74@VGS = -4.
5V
ID
-4.
6A
-3.
7A
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8.
This ma...
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