Part Number
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IRFZ46ZPbF |
Manufacturer
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International Rectifier |
Description
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Power MOSFET |
Published
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Aug 18, 2015 |
Detailed Description
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PD - 95562A
IRFZ46ZPbF
IRFZ46ZSPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Ra...
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Datasheet
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IRFZ46ZPbF
|
Overview
PD - 95562A
IRFZ46ZPbF
IRFZ46ZSPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings
IRFZ46ZLPbF
HEXFET® Power MOSFET D VDSS...
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