Preliminary Data Sheet
NP40N10YDF, NP40N10VDF, NP40N10PDF
100 V – 40 A – N-channel Power MOS FET Application: Automotive
R07DS0361EJ0201 Rev.
2.
01
May 13, 2013
Description
These products are N-channel MOS Field Effect
Transistors designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX.
(VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX.
(VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX.
(VGS = 10 V, ID = 20 A) (NP40N10PDF)
• Low Ciss: Ciss = 2100 pF TYP.
(VDS = 25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Gate
Body Diode
Source
8-pin HSON
87 6 5
...