NTD14N03R, NVD14N03R Power MOSFET 14 A, 25 V, N−Channel DPAK Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissip...

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