RJK0655DPB 60V, 35A, 6.
7m max.
Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 5.
3 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1053EJ0200 (Previous: REJ03G1881-0100) Rev.
2.
00 Apr 09, 2013 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR I...

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