FSB749
FSB749
C E B
SuperSOTTM-3
PNP Low Saturation
Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
Sourced from Process PC.
Absolute Maximum Ratings*
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
FSB749 25 35 5 3 -55 to +150
Units V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of...