Ordering number : ENA1711A ATP114 P-Channel Power MOSFET –60V, –55A, 16mΩ, Single ATPAK http://onsemi.
com Features • ON-resistance RDS(on)1=12mΩ(typ.
) • 4V drive • Protection diode in • Input Capacitance Ciss=4000pF(typ.
) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--15V, L=200μH, IAV=--28A *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings -...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)