Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET –60V, –100A, 5.
8mΩ, TO-263-2L/TO-263 http://onsemi.
com Features • ON-resistance RDS(on)1=4.
4mΩ (typ.
) • Input capacitance Ciss=13200pF (typ.
) • 4V drive TO-263 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--60A (Fig.
1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --100 --400 90...

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