DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
NP36N055HHE, NP36N055IHE, NP36N055SHE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated • Super low on-state resistance
RDS(on) = 14 mΩ MAX.
(VGS = 10 V, ID = 18 A) • Low Ciss : Ciss = 2300 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP36N055HHE NP36N055IHE Note
TO-251 (JEITA) / MP-3 TO-252 (JEITA) / MP-3Z
NP36N055SHE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltag...