PD - 95361A IRF1010ZPbF IRF1010ZSPbF Features IRF1010ZLPbF l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings HEXFET® Power MOSFET D VDSS = 55V G RDS(on)...

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