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Part Number
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FSGYC260R |
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Manufacturer
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Intersil Corporation |
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Description
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N-Channel Power MOSFET |
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Published
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Mar 23, 2005 |
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Detailed Description
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FSGYC260R
TM
Data Sheet
May 2000
File Number
4851.1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Inter...
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Datasheet
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FSGYC260R
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Overview
FSGYC260R
TM
Data Sheet
May 2000
File Number
4851.
1
Radiation Hardened, SEGR Resistant N-Channel Power MOSFET
Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.
Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems.
Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.
TM
Features
• 56A, 200V, rDS(ON) = 0.
033Ω • UIS Rated •...
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