Features and Benefits
PNP Transistor • BVCEO -40V • IC = -3A Continuous Collector Current • Low Saturation Voltage (-220mV max @ -1A) • RSAT = 104mΩ for a low equivalent On-Resistance • hFE characterized up to -3A for high current gain hold up
Schottky Diode • BVR 40V • IFAV = 3A Average Peak Forward Current • Low VF 500mV (@1A) for reduced power loss • Fast switching due to
Schottky barrier
• Low profile 0.
8mm high package for thin applications • RθJA efficient, 40% lower than SOT26 • 6mm2 footprint, 50% smaller than TSOP6 and SOT26 • Lead-Free, RoHS Compliant (Note 1) • Halogen and Antimony Free.
“Green” Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability
A Produc...