CEP630N/CEB630N CEF630N
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP630N CEB630N CEF630N
VDSS 200V 200V
200V
RDS(ON) 0.
36Ω 0.
36Ω
0.
36Ω
ID @VGS 9A 10V 9A 10V 9A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM e
PD
200 ±20...