Part Number
|
FDI150N10 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel PowerTrench MOSFET |
Published
|
Aug 30, 2015 |
Detailed Description
|
FDI150N10 — N-Channel PowerTrench® MOSFET
FDI150N10
N-Channel PowerTrench® MOSFET
100 V, 57 A, 16 mΩ
November 2013
Fe...
|
Datasheet
|
FDI150N10
|
Overview
FDI150N10 — N-Channel PowerTrench® MOSFET
FDI150N10
N-Channel PowerTrench® MOSFET
100 V, 57 A, 16 mΩ
November 2013
Features
• RDS(on) = 12 mΩ (Typ.
) @ VGS = 10 V, ID = 49 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Powe...
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