|
Part Number
|
FSL430R |
|
Manufacturer
|
Intersil Corporation |
|
Description
|
2A/ 500V/ 2.50 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
|
Published
|
Mar 23, 2005 |
|
Detailed Description
|
FSL430D, FSL430R
June 1998
2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discre...
|
|
Datasheet
|
FSL430R
|
Overview
FSL430D, FSL430R
June 1998
2A, 500V, 2.
50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-C...
Similar Datasheet