CEM1010
Single N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
100V, 9.
5A, RDS(ON) = 15.
5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous
TA=25 C
ID
TA=100 C T=1 sec e
9.
5 6
17
T=0.
1 sec e
25
Drain Current-Pulsed a
IDM 38
Maximum Power Dissipation
PD 2.
5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characte...