MMBTSC3875
NPN Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications.
The
transistor is subdivided into four groups O, Y, G and L, according to its DC current gain.
1.
Base 2.
Emitter 3.
Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB Ptot Tj TS
Value 60 50 5 150 30 200 150
-55 to +150
Unit V V V mA mA
mW OC OC
Page 1 of 4
6/9/2011
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=6V, IC=2mA
Current Gain Group O...