STW55NM60ND N-channel 600 V, 0.
047 Ω typ.
, 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package Datasheet — production data Features Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max 0.
060 Ω ID 51 A ■ The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ High dv/dt and avalanche capabilities Application ■ Switching applications Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, this revolutionary device features e...

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