FSPYC260R, FSPYC260F TM Data Sheet May 2000 File Number 4850.
1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.
Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems.
Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADS while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.
The Intersil portfolio of Star*Power FETS include...

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