DESCRIPTION
MT2501
P- Channel Enhancement Mode MOSFET
The MT2501 is the P-Channel logic enhancement mode power field effect
transistor are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
¾ -100V/-10A, RDS(ON) =205mΩ @ VGS = -10V ¾ -100V/-10A, RDS(ON) =225mΩ @ VGS = -7V ¾ Super high density cell design for extremely
ultra low RDS(ON) ¾ Exce...