PULAN TECHNOLSOeGmY CiOc.
,oLnIMdITuEcDtor CO.
,LTD P L2302GD PULAN 18948314942 QQ:1094642907 N-Channel High Density Trench MOSFET PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max 3.
0 65 @ VGS = 4.
5V 20V 2.
0 90 @ VGS = 2.
5V FEATURES ●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
SOT-23-3 D D S G G S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b a Drain-Source Diode Forward Current Maximum Power Dissipation a TA=25°C TA=75°C Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit...

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