N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Features:
• Low On-Resisrance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage
Applications:
• N-channel Enhancement Mode Effect
Transistor • Switching Application
Maximum Ratings:
Ratings at 25°C unless otherwise specified.
Parameter
Drain-source voltage Drain-gate voltage RGS ≤20kΩ Gate-source voltage Drain current -continuous Power dissipation Thermal resistance, junction-to-ambient Junction and storage temperature
Symbol
VDSS VGGR VGSS
ID PD RθJA TJ, Tstg
Value
50 50 ±20 200 300 417 -55 to +150
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