Part Number
|
FSS430D |
Manufacturer
|
Intersil Corporation |
Description
|
N-Channel Power MOSFETs |
Published
|
Mar 23, 2005 |
Detailed Description
|
FSS430D, FSS430R
June 1998
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Features
• 3A, 500V,...
|
Datasheet
|
FSS430D
|
Overview
FSS430D, FSS430R
June 1998
3A, 500V, 2.
70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Features
• 3A, 500V, rDS(ON) = 2.
70Ω • Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current
- 8.
0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2
- Usable to 3E13 Neutrons/cm2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commer...
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