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IRL2203NLPbF

Part Number IRL2203NLPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 14, 2015
Detailed Description PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperatur...
Datasheet IRL2203NLPbF





Overview
PD - 95219A l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l 100% RG Tested l Lead-Free G Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRL2203NSPbF IRL2203NLPbF HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 7.
0mΩ ID = 116A‡ S The D...






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