CED6056/CEU6056
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 76A , RDS(ON) = 6.
2mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 76 IDM 304
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
70 0.
47
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS ...