FQB25N33TM_F085 330V N-Channel MOSFET
FQB25N33TM_F085 330V N-Channel MOSFET
Features
• 25A, 330V, RDS(on) = 0.
23Ω @VGS = 10V • Low gate charge (typical 58nC) • Low Crss (typical 40pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Qualified to AEC Q101 • RoHS Compliant
April 2010
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Farichild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimized on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited f...