CEP93A3/CEB93A3
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
30V, 150A, RDS(ON) = 3.
0 mΩ @VGS = 10V.
RDS(ON) = 6.
0 mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ TC = 25 C @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
VDS VGS ID
IDM PD
30
±20
150
102 600 120 0.
8
Single Pulsed Avalanche E...