CEP540L/CEB540L CEF540L
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
100V, 36A, RDS(ON) = 50mΩ @VGS = 10V.
RDS(ON) = 53mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 36 IDM 120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
140 0.
91
Single Pulsed Avalanc...