CEP740G/CEB740G CEF740G
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP740G CEB740G
VDSS 400V 400V
CEF740G
400V
RDS(ON) 0.
55Ω 0.
55Ω 0.
55Ω
ID 10A 10A 10A e
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
G
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit TO-220/263
TO-220F
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 400
VGS ±30...