CEP9060N/CEB9060N CEF9060N
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
Type CEP9060N CEB9060N CEF9060N
VDSS 55V 55V 55V
RDS(ON) 10.
5mΩ 10.
5mΩ 10.
5mΩ
ID 90A
90A 90A e
@VGS 10V 10V 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
D
G
D
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C Single Pulsed Avalanche Ener...