CEP85A3/CEB85A3
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
25V, 90A, RDS(ON) = 6mΩ @VGS = 10V.
RDS(ON) = 9mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-263 & TO-220 package.
D
GS CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
25
±20
90 360 89 0.
71
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
The...