GWS2111 Dual 12V N-Channel Power MOSFET GWS2111 V(BR)DSS rDS(on) Product Summary ID=250uA VGS=4.
5V 12.
0 V 34 mΩ Min Typ Features • Low RDS (on) in a small footprint • Ultra low gate charge and figure of merit • Chip-scale 0.
77 mm x 0.
77 mm LGA package • Low Thermal Resistance Equivalent Circuit FET1 FET2 Gate1 Gate2 .
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Applications • Li ion Battery Protection • Portable Devices, Cell Phones, PDA • Rated for short circuit and over current protection • Integrated gate diodes provide ESD protection of 2500V HBM.
Source1 Source2 Description The GWSXXXX is a Dual 12V, 34 mΩ, N-Channel Power Mosfet used for Li ion battery protection.
It is offered in a chip-scale 0.
77 mm...

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